2 edition of Simulations of the effect of applied magnetic field on REB diodes for laser excitation found in the catalog.
Simulations of the effect of applied magnetic field on REB diodes for laser excitation
J. P. Quintenz
by Dept. of Energy, Sandia Laboratories, for sale by the National Technical Information Service] in Albuquerque, N.M, [Springfield, Va
Written in English
|Statement||J. P. Quintenz and M. T. Buttram, Sandia Labortories ; prepared by Sandia Laboratories for the United States Atomic Energy Commission.|
|Series||SAND ; 79-2138, SAND (Series) (Albuquerque, N.M.) -- 79-2138.|
|Contributions||Buttram, M. T., U.S. Atomic Energy Commission., Sandia Laboratories.|
|The Physical Object|
|Pagination||29 p. :|
|Number of Pages||29|
Proc. SPIE , Emerging Liquid Crystal Technologies XIV, (13 March ); doi: / Search the leading research in optics and photonics applied research from SPIE journals, conference proceedings and presentations, and eBooks.
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Get this from a library. Simulations of the effect of applied magnetic field on REB diodes for laser excitation. [J P Quintenz; M T Buttram; U.S.
Atomic Energy Commission.; Sandia Laboratories.]. A computer code is described which simulates the performance of diodes with sidewalls or applied magnetic fields. The effects of applying an external magnetic field on the electron flow pattern in the diodes are detailed.
Implications for the design of such diodes to meet applications where the survival of the anode foil is critical are discussed.
Author: J. Quintenz, M. Buttram. The direction of the magnetic field in the xoz plane is opposite when compared with Fig. 9(a), while that for the yoz plane is the same compared with Fig.
9(c). Therefore, a compound magnetic field containing an alternating component along the x-axis and a static magnetic field component along the y-axis was applied to the : Lin Wang, Ji Chen, ChunLi Jiang, ChuanSong Wu.
In6 there are indications that the oscillation may be stabilized if a strong magnetic field is applied. 23S â ¢ !I i1 iii ii rrne ') Fig. Diode current as a function of time showing unstable behavior for diode impedance below the critical in Eg.(2)6.
impedance A new method ofintense REB modulation at frequency up to 1 GHz is. Quintenz's research works with 1, citations and 1, reads, including: Development path for Z-pinch IFE.
The effects of diode geometry and externally applied magnetic fields on electron beam production and transport for KrF laser pumping has been studied using two and three dimensional particle-in-cell models. The efficiency with which electrons may be transported through the foil support structure depends critically on the size of the openings in the structure as well as the magnitude of the.
Efforts to circumvent this include a π/4 laser excitation angle to the surface as the in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform.
This paper presents the results of dimensional numerical simulation of both the modulation of long high-density relativistic electron bunches (REB) in a plasma and the excitation of wake. Magnetic field influences on the lateral dose response functions of photon-beam detectors: MC study of wall-less water-filled detectors with various densities Hui Khee Looe et al Physics in Medicine & Biology 62 IOPscience.
Reference dosimetry in magnetic fields: formalism and ionization chamber correction factors. To directly verify the spatial characteristics of the different modes, two microfocused BLS spectra measured with the laser spot at the center and near the edge of a rectangular dot are compared with a spectrum acquired with conventional BLS, recorded in the same experimental conditions (same applied magnetic field H = kOe and perpendicular.
transverse magnetic field effect on the non-monoenergetic reb transport in low pressure gas. h Φ - magnetic field transport of high power reb.
thermoemission gun with a high magnetic compression of a hollow microsecond kev, a electron beam. Fig. shows a typical OLED structure and the largest reported MEL and MC (which is essentially the inverse of OMR) magnitudes of an OLED (Nguyen et al., ).The MEL (MC) response may reach about 60% (30%) at an applied magnetic field of about mT.
The effect has been found to be essentially independent of the angle between the film plane and applied magnetic field. Wohlgenannt's research works with 3, citations and 3, reads, including: World scientific reference on spin in organics.
The symmetry breaking is either inherent to the dot due to geometry asymmetries, or it can be obtained by applying a magnetic field with an orientation different from the dot symmetry axis.
A VSM operates on Faraday's law of induction, which states that a changing magnetic field will produce an electric field.
This electric field can be measured and provides information about the changing magnetic field. A VSM was used to measure the magnetic behavior of nanostructured magnetic materials .
The sample was first magnetized in a. Transient EPR and EDMR spectra were recorded using a laboratory-built combined X-/Q-band EPR spectrometer and a dielectric ring resonator (Bruker ER X-MD5). The magnetic field axis was calibrated by a Gaussmeter (Bruker ER M), and the (constant) offset between the positions of the Gaussmeter and the sample was determined by a reference sample (nitrogen encapsulated in C 60).
In addition, the Au/ZrO 2 system is set for monitoring the response of excited Au nanodots as a control group, where no electron is able to transfer from Au nanodots to ZrO 2, since the conduction band edge of ZrO 2 is located V above that of TiO 2 .The observed transient absorption of Au/TiO 2 can be attributed to the electrons transfer into TiO 2, because there is no transient.
The samples grown with an applied magnetic field showed a more intense and narrower photoluminescence emission, as well as a lower surface roughness. Additionally, postgrowth annealing has a smaller impact on the photoluminescence emission when a magnetic field is used, and a much lower blueshift is observed.
Mehr anzeigen Weniger anzeigen. A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as resistivity falls as its temperature rises; metals are the opposite.
Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal two differently-doped regions exist in the. The effect of a horizontal magnetic field of mT flux density on the co-deposition of Ni and Fe from a modified Watt's bath was studied.
Magnetic field imposition increases the iron content of the deposit and destabilizes cell potential variations under galvanostatic deposition. Spectra were simulated at magnetic fields between 0 and 8 mT.
The simulations were able to predict both the EPR peak positions and their amplitudes, corresponding to those from FC-DNP experiments with 14 N and 15 N TEMPOL solutions. EPR irradiation was in the 45– MHz range while NMR signal detection occurred at a field of 59 mT.Dilute magnetic semiconductors (DMS) form a class of materials that combine properties of a semiconductor host with magnetic effects due to an impurity dopant.
While the concept of DMS materials was known for a long time, it was only in that researchers were able to demonstrate such materials in GaAs and InAs films doped with Mn (Munetaka. The quantum model includes the effects of laser fields (wavelength and intensity), properties of metals (Fermi energy and work function including Schottky effect), and the applied dc field on the cathode surface.